| PART |
Description |
Maker |
| 1SS302TE85LF 1SS302T5LFH |
Ultra High Speed Switching Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| GBAV152 |
The GBAV152 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| 1SS426 |
Switching diode
Ultra-High Speed Switching Applications
|
Toshiba Semiconductor
|
| KTK5131S |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SS226 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS34907 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS193 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS190 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| L1SS184LT1G |
Ultra High Speed Switching Application
|
Leshan Radio Company
|
| 1SS18407 1SS184 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
